Technology of Gallium Nitride Crystal Growth

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Dirk Ehrentraut, Elke Meissner, Michal Bockowski, "Technology of Gallium Nitride Crystal Growth"
2010 | pages: 336 | ISBN: 3642048285 | PDF | 6,8 mb


Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices.

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Tags: Crystal, Growth, Nitride, Gallium, Technology
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